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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4804
DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 900 Collector-base voltage Open emitter Collector-emitter voltage Open base 600 7 Emitter-base voltage Open collector Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 3 5 1 30 150 -55~150
UNIT V V V A A A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4804
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
600
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=0.8A; IB=0.16A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
hFE
NDU ICO E SEM ANG INCH
Emitter cut-off current VEB=7V; IC=0 DC current gain IC=0.8A ; VCE=5V 10
TOR
0.1
mA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4804
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm)
3


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